尊龙集团有限公司

CN EN
Home
About Us
Newpros
IGBT Discrete For PTC of Auto Industry
IGBT Discrete For PTC of Auto Industry Back
PDF

Introduction 1.SuperTO-220standardpackaging
2.VCES=1200V,IC=40A~80A;
3.TheproductismainlyusedinPTC application;
4.ThehighfrequencyIGBTmodulesandothermarket mainstream product sarecompletely pintopin alternatives;
5.EnvironmentallyfriendlycomplyingwithRoHSstandards;
Features 1.Trench-FSstructurehasbetterbalanceofblockingcapacityandLowsaturationvoltage;
2.Maximum junctiontemperatureTjmax=175℃;
3.HighefficiencycharacteristicswithverylowVce(sat)andslowturn-offcharacteristics,
suitableforPTC applications;;
SPECIFICATION

DGR40N120ATL0AQ DGR80N120ATL1BQ DGS40N120ATL0AQ DGS80N120ATL1BQ

Related new products

MMBZ Series ESD with Voltage Regulation Characteristics

1200V 80 mΩ SIC MOSFET

New plug-in rectifier bridge -JC that follows the trend of flattening

1200V 40mΩ SiC MOSFET

Portable energy storage power supply special plug-in type fast recovery bridge

IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application

SOD-123HE TVS Diode

YBS2G Gulling Patch Rectifier Bridge

TOLL Package SiC MOSFET

SOD-123FL package power ESD
网站地图